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| FQP90N10V2/FQPF90N10V2 QFET FQP90N10V2/FQPF90N10V2 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for DC to DC converters, sychronous rectification, and other applications lowest Rds(on) is required. (R) Features * * * * * * 90 A, 100V, RDS(on) = 0.01 @VGS = 10 V Low gate charge ( typical 147 nC) Low Crss ( typical 300 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! G! GDS TO-220 FQP Series GD S TO-220F FQPF Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current - Continuous (TC = 100C) Drain Current - Pulsed (Note 1) FQP90N10V2 100 90 68 360 FQPF90N10V2 90 * 68 * 360 * 30 2430 90 25 4.5 Units V A A A V mJ A mJ V/ns W W/C C C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) (Note 2) (Note 1) (Note 1) (Note 3) - Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 250 1.67 -55 to +175 300 83 0.55 * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol RJC RJS RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient FQP90N10V2 0.6 0.5 62.5 FQPF90N10V2 1.8 -62.5 Units C/W C/W C/W (c)2004 Fairchild Semiconductor Corporation Rev. A1, April 2004 FQP90N10V2/FQPF90N10V2 Electrical Characteristics Symbol Parameter TC = 25C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS / TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 100 V, VGS = 0 V VDS = 80 V, TC = 150C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 100 ------0.1 ------1 10 100 -100 V V/C A A nA nA On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 A VGS = 10 V, ID = 45 A VDS = 40 V, ID = 45 A (Note 4) 2.0 --- -8.5 72 4.0 10 -- V m S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---4730 1180 300 6150 1530 390 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 80 V, ID = 90 A, VGS = 10 V (Note 4, 5) VDD = 50 V, ID = 90 A, RG = 25 (Note 4, 5) -------- 52 492 304 355 147 28 60 114 994 618 720 191 --- ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 90 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 90 A, dIF / dt = 100 A/s (Note 4) ------ ---114 0.54 90 360 1.4 --- A A V ns C Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 0.3mH, IAS = 90A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 90A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature (c)2004 Fairchild Semiconductor Corporation Rev. A1, April 2004 FQP90N10V2/FQPF90N10V2 Typical Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top : 10 2 175C 25C ID, Drain Current [A] 10 2 ID, Drain Current [A] 10 1 -55C 10 0 10 1 Notes : 1. 250s Pulse Test 2. TC = 25 -1 Notes : 1. VDS = 40V 2. 250s Pulse Test -1 10 10 0 10 1 10 2 4 6 8 10 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 30 RDS(ON) [m], Drain-Source On-Resistance VGS = 10V 20 IDR, Reverse Drain Current [A] 25 10 2 10 1 15 10 VGS = 20V 175C 10 0 25C Notes : 1. VGS = 0V 2. 250s Pulse Test 5 Note : TJ = 25 0 0 100 200 300 400 500 600 10 -1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 ID, Drain Current [A] VSD, Source-Drain voltage [V] Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature 11000 10000 9000 8000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 12 10 VGS, Gate-Source Voltage [V] VDS = 50V 8 Capacitance [pF] 7000 6000 5000 4000 3000 2000 1000 0 -1 10 0 Ciss Coss Notes ; 1. VGS = 0 V VDS = 80V 6 4 Crss 2. f = 1 MHz 2 Note : ID = 90A 10 10 1 0 0 20 40 60 80 100 120 140 160 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics (c)2004 Fairchild Semiconductor Corporation Rev. A1, April 2004 FQP90N10V2/FQPF90N10V2 Typical Characteristics (Continued) 1.2 3.0 BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.1 RDS(ON), (Normalized) Drain-Source On-Resistance 2.5 2.0 1.0 1.5 1.0 0.9 Notes : 1. VGS = 0 V 2. ID = 250A 0.5 Notes : 1. VGS = 10 V 2. ID = 45 A 0.8 -100 -50 0 50 100 150 200 0.0 -100 -50 0 50 100 150 200 TJ, Junction Temperature [C] TJ, Junction Temperature [C] Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature 10 3 Operation in This Area is Limited by R DS(on) 10 s 100 s 1 ms 10 ms DC 10 3 Operation in This Area is Limited by R DS(on) ID, Drain Current [A] 10 2 ID, Drain Current [A] 10 s 10 2 100 s 1 ms 10 ms DC 10 1 10 1 10 0 Notes : 1. TC = 25C 2. TJ = 175C 3. Single Pulse 10 0 Notes : 1. TC = 25C 2. TJ = 175C 3. Single Pulse 10 -1 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 VDS, Drain-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 9-1. Maximum Safe Operating Area for FQP90N10V2 Figure 9-2. Maximum Safe Operating Area for FQPF90N10V2 100 90 80 ID, Drain Current [A] 70 60 50 40 30 20 10 0 25 50 75 100 125 150 175 TC, Case Temperature [C] Figure 10. Maximum Drain Current vs Case Temperature (c)2004 Fairchild Semiconductor Corporation Rev. A1, April 2004 FQP90N10V2/FQPF90N10V2 Typical Characteristics (Continued) 10 0 D = 0 .5 (t), Thermal Response 10 -1 0 .2 0 .1 0 .0 5 0 .0 2 0 .0 1 N o te s : 1 . Z J C ( t) = 0 .6 C / W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M * T C = P D M * Z J C ( t) PDM s in g le p u ls e JC 10 -2 Z t1 t2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11-1. Transient Thermal Response Curve for FQP90N10V2 10 0 ZJC(t), Thermal Response D = 0 .5 0 .2 0 .1 N o te s : 1 . Z J C (t) = 1 .8 C /W M a x. 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M * T C = P D M * Z J C (t) 10 -1 0 .0 5 0 .0 2 0 .0 1 s in g le p u ls e PDM t1 t2 -3 -2 -1 0 1 10 -2 10 -5 10 -4 10 10 10 10 10 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] Figure 11-2. Transient Thermal Response Curve for FQPF90N10V2 (c)2004 Fairchild Semiconductor Corporation Rev. A1, April 2004 FQP90N10V2/FQPF90N10V2 Gate Charge Test Circuit & Waveform 50K 12V 200nF 300nF Same Type as DUT VDS VGS Qg 10V Qgs Qgd VGS DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS VGS RG RL VDD VDS 90% 10V DUT VGS 10% td(on) t on tr td(off) t off tf Unclamped Inductive Switching Test Circuit & Waveforms L VDS ID RG 10V tp BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD BVDSS IAS VDD ID (t) VDD tp DUT VDS (t) Time (c)2004 Fairchild Semiconductor Corporation Rev. A1, April 2004 FQP90N10V2/FQPF90N10V2 Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG Same Type as DUT VDD VGS * dv/dt controlled by RG * ISD controlled by pulse period VGS ( Driver ) Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) IRM di/dt Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop (c)2004 Fairchild Semiconductor Corporation Rev. A1, April 2004 FQP90N10V2/FQPF90N10V2 Package Dimensions TO-220 9.90 0.20 1.30 0.10 2.80 0.10 (8.70) o3.60 0.10 (1.70) 4.50 0.20 1.30 -0.05 +0.10 9.20 0.20 (1.46) 13.08 0.20 (1.00) (3.00) 15.90 0.20 1.27 0.10 1.52 0.10 0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20] 10.08 0.30 18.95MAX. (3.70) (45 ) 0.50 -0.05 +0.10 2.40 0.20 10.00 0.20 Dimensions in Millimeters (c)2004 Fairchild Semiconductor Corporation Rev. A1, April 2004 FQP90N10V2/FQPF90N10V2 Package Dimensions (Continued) TO-220F 3.30 0.10 10.16 0.20 (7.00) o3.18 0.10 2.54 0.20 (0.70) 6.68 0.20 15.80 0.20 (1.00x45) MAX1.47 9.75 0.30 0.80 0.10 (3 ) 0 0.35 0.10 2.54TYP [2.54 0.20] #1 0.50 -0.05 2.54TYP [2.54 0.20] 4.70 0.20 +0.10 2.76 0.20 9.40 0.20 Note: PKG backside isolation voltage : 4000V Dimensions in Millimeters (c)2004 Fairchild Semiconductor Corporation Rev. A1, April 2004 15.87 0.20 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FACT Quiet seriesTM ActiveArrayTM FAST(R) FASTrTM BottomlessTM FPSTM CoolFETTM CROSSVOLTTM FRFETTM GlobalOptoisolatorTM DOMETM GTOTM EcoSPARKTM HiSeCTM E2CMOSTM EnSignaTM I2CTM i-LoTM FACTTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM DISCLAIMER ImpliedDisconnectTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerSaverTM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2004 Fairchild Semiconductor Corporation Rev. I10 |
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